| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that exhibits stable electric characteristics without adverse effect of a thermal load, has high electric reliability, and is usable as an image sensor package etc. <P>SOLUTION: The semiconductor device includes: a semiconductor substrate which includes a first principal surface and a second principal surface opposed to each other and also includes a through-hole bored penetrating the semiconductor substrate along the thickness to link the first principal surface and second principal surface to each other; a first insulating layer and a first conductive layer formed on the first principal surface of the semiconductor substrate; a second insulating layer formed continuously from on an inner wall surface of the through-hole to on the second principal surface of the semiconductor substrate; and a second conductive layer contacting the first conductive layer and formed on the second insulating layer continuously from on the inner wall surface of the through-hole to on the second principal surface of the semiconductor substrate. A gap portion is formed at an end of the semiconductor substrate on the side of the first principal surface, and filled with a filler, thus constituting the semiconductor device. <P>COPYRIGHT: (C)2010,JPO&INPIT |
