| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the same, in which two wafers are connected by a metal film, residues generated during formation of a via hole are thoroughly removed, and a barrier metal layer and a metal layer remaining on a hard mask layer are selectively and simultaneously removed. <P>SOLUTION: The method include the steps of connecting a second wafer onto a first wafer, forming the hard mask layer on a backside of the second wafer, forming a photosensitive film pattern exposing a via hole region over the hard mask layer, forming a hard mask pattern by etching the hard mask layer using the photosensitive film pattern as an etching mask, and then forming a via hole by etching the first and the second wafers to a predetermined depth using the hard mask pattern as an etching mask. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
