| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device to which a cleaning method effective on a semiconductor substrate containing Ge is applied. Ž<P>SOLUTION: A method of manufacturing a semiconductor device is characterized in that a semiconductor substrate containing Ge is cleaned with a halogenated gas containing at least one among an HCL gas, an HBr gas and an HI gas. A method of manufacturing a semiconductor device is characterized in that a semiconductor substrate containing Ge is cleaned with an HCL solution of 75 to 110°C. For example, the methods are applicable to preprocessing of a gate insulating film of MISFET, preprocessing of source-drain electrode formation, and preprocessing of metal plug formation for a contact. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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