| 摘要 |
<P>PROBLEM TO BE SOLVED: To restrain the bending of a side wall pattern in a side wall transfer process. Ž<P>SOLUTION: The processing of a backing insulating film with the side wall pattern as a mask is performed by dry-etching using fluorocarbon-based gas. In this case, assuming a film thickness of a silicone film forming a side wall as xnm, a self-bias voltage Vdc for satisfying a relational expression of Vdc<46x-890, is applied on a substrate. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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