METHOD OF FABRICATING A HIGH Q FACTOR INTEGRATED CIRCUIT INDUCTOR

摘要

A method of forming an inductor. The method including: (a) forming a dielectric layer on a top surface of a substrate; after (a), (b) forming a lower trench in the dielectric layer; after (b), (c) forming a resist layer on a top surface of the dielectric layer; after (c), (d) forming an upper trench in the resist layer, the upper trench aligned to the lower trench, a bottom of the upper trench open to the lower trench; and after (d), (e) completely filling the lower trench and at least partially filling the upper trench with a conductor in order to form the inductor.