Dense Gd-doped Ceria Layers on Porous Substrates and Methods of Making the Same

摘要

Solid-state ionic or electrochemical devices can depend critically on the proper formation of a dense, Gd-doped ceria (GDC) layer on a porous substrate. Devices and methods of the present invention are characterized by the formation of a transitional buffer layer, which is less than 10 microns thick and comprises GDC, located between the porous substrate and the dense GDC layer. The transitional buffer layer provides a practical way to form the dense GDC layer on the porous substrate without cracks in the GDC layer and without clogging the pores of the substrate.