| 摘要 |
A memory device includes a composite dielectric layer overlying a substrate. The composite dielectric layer includes a first dielectric layer, a bonding interface, and a second dielectric layer. The first and the second dielectric layers are bonded together at the bonding interface. A first plurality of conductive lines overlies the combined dielectric layer. One or more semiconductor switching devices formed in a single-crystalline semiconductor layer overlie and are coupled with one of the first plurality of conductive lines. The memory device also has one or more two-terminal memory elements, each of which overlies and is coupled to a corresponding one of the single-crystalline switching device. A second plurality of conductive lines overlies the memory elements. In the memory device, each of the memory elements is coupled to one of the first plurality of conductive lines and one of the second plurality of conductive lines.
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