发明名称 |
DRIVE CIRCUIT OF POWER SEMICONDUCTOR DEVICE |
摘要 |
Provided is a driving circuit for a power semiconductor element, which can achieve a high-speed response to a voltage change (dV/dt) while reducing power consumption and prevent the malfunction of the power semiconductor element by a simple circuit configuration. The driving circuit for the power semiconductor element is provided with a control circuit for performing on/off control of the power semiconductor element, a direct-current power supply for supplying voltage between control terminals of the power semiconductor element, and a switching element connected between the control terminals of the power semiconductor element. The switching element is turned on when the power-supply voltage of the direct-current power supply decreases or turned on when the voltage between the control terminals of the power semiconductor element increases while the power-supply voltage of the direct-current power supply decreases to thereby cause a short-circuit between the control terminals of the power semiconductor element. |
申请公布号 |
CA2734701(A1) |
申请公布日期 |
2010.02.25 |
申请号 |
CA20092734701 |
申请日期 |
2009.07.22 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
NAKAYAMA, YASUSHI;NAKAGAWA, RYOSUKE |
分类号 |
H02M1/08 |
主分类号 |
H02M1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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