发明名称 DRIVE CIRCUIT OF POWER SEMICONDUCTOR DEVICE
摘要 Provided is a driving circuit for a power semiconductor element, which can achieve a high-speed response to a voltage change (dV/dt) while reducing power consumption and prevent the malfunction of the power semiconductor element by a simple circuit configuration.  The driving circuit for the power semiconductor element is provided with a control circuit for performing on/off control of the power semiconductor element, a direct-current power supply for supplying voltage between control terminals of the power semiconductor element, and a switching element connected between the control terminals of the power semiconductor element.  The switching element is turned on when the power-supply voltage of the direct-current power supply decreases or turned on when the voltage between the control terminals of the power semiconductor element increases while the power-supply voltage of the direct-current power supply decreases to thereby cause a short-circuit between the control terminals of the power semiconductor element.
申请公布号 CA2734701(A1) 申请公布日期 2010.02.25
申请号 CA20092734701 申请日期 2009.07.22
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 NAKAYAMA, YASUSHI;NAKAGAWA, RYOSUKE
分类号 H02M1/08 主分类号 H02M1/08
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