| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a single photon generating device capable of injecting a current into a semiconductor quantum dot and also extracting a photon with sufficient efficiency. <P>SOLUTION: An active layer 6 including a quantum dot 7 is embedded between a p-type semiconductor layer 4 and an n-type semiconductor layer 5. In an ohmic electrode 11 formed on one of the semiconductor layers, an opening 9 with protrusions having a structure in which metal protrusions 12, 13 are protruded from a circular opening is formed. A photon generated by current injection from the p-type semiconductor layer 4 and the n-type semiconductor layer 5 is preferentially coupled to a strong electromagnetic field mode existing at the center of the opening 9 with protrusions, and taken out to the outside through a concentrically formed grating 14 with high efficiency. <P>COPYRIGHT: (C)2010,JPO&INPIT |
