发明名称 |
CAPACITOR LAYER FORMING MATERIAL |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a capacitor layer forming material capable of simultaneously improving the average capacity density of a dielectric layer possessed by the capacitor layer forming material and reduction in leak current density. Ž<P>SOLUTION: This capacitor layer forming material has the dielectric layer between a first conductive layer used for forming an upper electrode and a second conductive layer used for forming a lower electrode. The capacitor layer forming material is adopted in such a way that the second conductive layer is a nickel layer having a purity of 99.99 wt.% or higher, and the dielectric layer includes manganese in a range of 0.25-1.00 mol% with the total quantity of barium, strontium and titanium as 100 mol% in a composition of (Ba<SB>x</SB>Sr<SB>1-x</SB>)TiO<SB>3</SB>(0≤x≤1). Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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申请公布号 |
JP2010045208(A) |
申请公布日期 |
2010.02.25 |
申请号 |
JP20080208447 |
申请日期 |
2008.08.13 |
申请人 |
MITSUI MINING & SMELTING CO LTD |
发明人 |
SUGANO AKIHIRO;ABE NAOHIKO;SUGIOKA AKIKO;ITO AYUMI |
分类号 |
H01G4/12;H01G4/10;H01G4/33;H05K1/16 |
主分类号 |
H01G4/12 |
代理机构 |
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