发明名称 FIELD EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM
摘要 <p>A field effect transistor includes a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode for obtaining a current in response to the gate voltage; an active layer provided adjacent to the source electrode and the drain electrode and formed of an oxide semiconductor including magnesium and indium as major components; and a gate insulating layer provided between the gate electrode and the active layer.</p>
申请公布号 WO2010021349(A1) 申请公布日期 2010.02.25
申请号 WO2009JP64535 申请日期 2009.08.13
申请人 RICOH COMPANY, LTD.;UEDA, NAOYUKI;ABE, YUKIKO;KONDO, HIROSHI;NAKAMURA, YUKI;SONE, YUJI 发明人 UEDA, NAOYUKI;ABE, YUKIKO;KONDO, HIROSHI;NAKAMURA, YUKI;SONE, YUJI
分类号 H01L29/786;G02F1/1368;G09F9/30 主分类号 H01L29/786
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