| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film deposition method for a zinc oxide-based antireflection film, by which a desired antireflection performance can be obtained by stacking a plurality of refractive layers different in refractive index by using a zinc oxide-based target and performing sputtering while changing the ratios of respective gases in a reactive gas containing two or three kinds selected from the group comprising oxygen gas, hydrogen gas and steam, to provide an antireflection film, and to provide a film deposition apparatus. <P>SOLUTION: The film deposition method for an antireflection film includes a step of filling the inside of a film deposition chamber 23 with a first reactive gas atmosphere containing two or three kinds selected from the group comprising oxygen gas, hydrogen gas and steam by using a gas introduction means 35 and depositing a first zinc oxide-based thin film, and a step of filling the inside of the film deposition chamber 23 with a second reactive gas atmosphere containing two or three kinds selected from the group comprising oxygen gas, hydrogen gas and steam and having a composition different from that of the first reactive gas, and depositing a second zinc oxide-based thin film on the first zinc oxide-based thin film. <P>COPYRIGHT: (C)2010,JPO&INPIT |
