发明名称 METHOD OF TESTING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent damage of a semiconductor device and a testing apparatus therefor during burn-in test. SOLUTION: A semiconductor device to be tested is mounted on a socket installed on a board of a burn-in testing apparatus and a voltage is applied to the semiconductor device while increasing the voltage up to a maximum testing voltage Vm in a stepped manner. At that time, a value of a current passing through the semiconductor device is detected for each step of the voltage application and it is determined whether the detected current value is proper. When the applied voltage is increased in a stepped manner and an abnormal current value is detected in a voltage application step, voltage application to the semiconductor device is stopped in the voltage application step in which the abnormal conditions are detected. Thus, no voltage is hereinafter applied to the semiconductor device, thereby to avoid thermal runaway thereof and to prevent damage of the semiconductor device and the burn-in testing apparatus resulting from the thermal runaway. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010044013(A) 申请公布日期 2010.02.25
申请号 JP20080209699 申请日期 2008.08.18
申请人 FUJITSU MICROELECTRONICS LTD 发明人 KOIKE HIROYUKI
分类号 G01R31/26 主分类号 G01R31/26
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