| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve an avalanche resistant quantity by making the relationship suitable between breakdown voltage of an element part and breakdown voltage of a tail end part, in a semiconductor device for electric power having the element part and the tail end part. Ž<P>SOLUTION: The semiconductor device 101 for electric power having the element part 111 and the tail end part 112 is provided with a first semiconductor layer 121, a first area being a second semiconductor layer 122 and a third semiconductor layer 123 formed on the first semiconductor layer and having the second and third semiconductor layers in the element part, and a second area having the second and third semiconductor layers. The semiconductor device further includes the second and third semiconductor layers, a fourth semiconductor layer 124 and a fifth semiconductor layer 125, while achieving the relationship of ΔN<SB>C1</SB>>ΔN<SB>T</SB>>ΔN<SB>C2</SB>among a difference value ΔN<SB>C1</SB>of a first area of the element part, a difference value ΔN<SB>C2</SB>of a second area of the element part and a difference value ΔN<SB>T</SB>of the tail end part, on a difference value ΔN(=N<SB>A</SB>-N<SB>B</SB>) of subtracting an impurity quantity N<SB>B</SB>per unit length of the third semiconductor layer from an impurity quantity N<SB>A</SB>per unit length of the second semiconductor layer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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