发明名称 |
METHOD FOR FORMING NITRIDE SEMICONDUCTOR LAMINATED STRUCTURE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT |
摘要 |
The method for forming a nitride semiconductor laminated structure according to the present invention includes: a first layer forming step of forming an n-type or i-type first layer composed of a group III nitride semiconductor; a second layer forming step of laminating a p-type second layer composed of a group III nitride semiconductor and containing Mg on the first layer; and a third layer forming step of forming an n-type or i-type third layer composed of a group III nitride semiconductor on the second layer after the second layer forming step.
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申请公布号 |
US2010047976(A1) |
申请公布日期 |
2010.02.25 |
申请号 |
US20080531059 |
申请日期 |
2008.03.07 |
申请人 |
ROHM CO., LTD |
发明人 |
OTAKE HIROTAKA;OHTA HIROAKI;EGAMI SHIN |
分类号 |
H01L21/336;H01L21/20 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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