发明名称 STACKED MEMORY CHIP, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING SAME, AND MANUFACTURING METHOD THEREFOR
摘要 <p>Memory areas that operate independently for each logic macro of a semiconductor chip cannot be reserved with the memory configuration required by the logic macros. A stacked memory chip stacked on the semiconductor chip comprises a plurality of memory elements arranged in a two-dimensional array, wherein each of the memory elements is provided with an inter-chip I/O section for transmitting a signal between the stacked memory chip and the semiconductor chip, a memory macro capable of writing and reading data, and first wiring for transmitting the data, an address signal, and a command between the adjacent memory elements, and wherein the write data from the semiconductor chip is transferred to the memory macros of the memory elements via the inter-chip I/O sections to perform the write operation, and the data read from the memory macros is transferred to the semiconductor chip via the inter-chip I/O sections.</p>
申请公布号 WO2010021410(A1) 申请公布日期 2010.02.25
申请号 WO2009JP65016 申请日期 2009.08.21
申请人 NEC CORPORATION;SAITO, HIDEAKI;MIZUNO, MASAYUKI;OUCHI, AKIRA;YAMADA, YUSUKE;SAKAMOTO, TOSHITSUGU;TAGO, MASAMOTO 发明人 SAITO, HIDEAKI;MIZUNO, MASAYUKI;OUCHI, AKIRA;YAMADA, YUSUKE;SAKAMOTO, TOSHITSUGU;TAGO, MASAMOTO
分类号 H01L21/822;G11C5/00;H01L25/065;H01L25/07;H01L25/18;H01L27/04;H01L27/10 主分类号 H01L21/822
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