发明名称 |
STACKED MEMORY CHIP, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING SAME, AND MANUFACTURING METHOD THEREFOR |
摘要 |
<p>Memory areas that operate independently for each logic macro of a semiconductor chip cannot be reserved with the memory configuration required by the logic macros. A stacked memory chip stacked on the semiconductor chip comprises a plurality of memory elements arranged in a two-dimensional array, wherein each of the memory elements is provided with an inter-chip I/O section for transmitting a signal between the stacked memory chip and the semiconductor chip, a memory macro capable of writing and reading data, and first wiring for transmitting the data, an address signal, and a command between the adjacent memory elements, and wherein the write data from the semiconductor chip is transferred to the memory macros of the memory elements via the inter-chip I/O sections to perform the write operation, and the data read from the memory macros is transferred to the semiconductor chip via the inter-chip I/O sections.</p> |
申请公布号 |
WO2010021410(A1) |
申请公布日期 |
2010.02.25 |
申请号 |
WO2009JP65016 |
申请日期 |
2009.08.21 |
申请人 |
NEC CORPORATION;SAITO, HIDEAKI;MIZUNO, MASAYUKI;OUCHI, AKIRA;YAMADA, YUSUKE;SAKAMOTO, TOSHITSUGU;TAGO, MASAMOTO |
发明人 |
SAITO, HIDEAKI;MIZUNO, MASAYUKI;OUCHI, AKIRA;YAMADA, YUSUKE;SAKAMOTO, TOSHITSUGU;TAGO, MASAMOTO |
分类号 |
H01L21/822;G11C5/00;H01L25/065;H01L25/07;H01L25/18;H01L27/04;H01L27/10 |
主分类号 |
H01L21/822 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|