| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist pattern-forming method which easily, efficiently forms finer resist patterns. <P>SOLUTION: The resist pattern-forming method includes: (1) a process in which a resin composition, which makes a resist pattern insoluble, is applied to a first resist pattern, and development is carried out after baking or UV curing, and the first resist pattern is made to be an insoluble resist pattern having a plurality of first line parts and first space parts; (2) a process in which resist layers formed in the first space parts by using a positive-type radiation-sensitive resin composition are selectively subjected to exposure via a mask; and (3) a process in which development is carried out to form second line parts in the first space parts, and a second resist pattern is formed, the second resist pattern having the first line parts, the second line parts, and one or more second space parts whose widths (W<SB>2</SB>) are over 0% and at most 30% of the widths (W<SB>1</SB>) of the first space parts, the second space parts being formed between the first and second line parts. <P>COPYRIGHT: (C)2010,JPO&INPIT |
