METHOD OF MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR LAYER BONDED SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a group-III nitride semiconductor layer bonded substrate high in the crystallinity of a group-III nitride semiconductor layer.

SOLUTION: The method of manufacturing a group-III nitride semiconductor layer bonded substrate includes: a process of implanting ions I of at least one of hydrogen and helium in a region of a prescribed depth D from one main surface 20m of a group-III nitride semiconductor substrate 20; a process of bonding a different kind substrate 10 with the main surface 20m of the group-III nitride semiconductor substrate 20; a process of obtaining a group-III nitride semiconductor layer bonded substrate 1 by separating the group-III nitride semiconductor substrate 20 in a region 20i implanted with the ions I; and a process of annealing the group-III nitride semiconductor layer bonded substrate 1 at a temperature not lower than 700°C in an atmosphere of a nitrogen-containing gas N.

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