SEMICONDUCTOR DEVICE WITH A REDUCED BAND GAP AND PROCESS

摘要

The application relates to a semiconductor device made of silicon with regionally reduced band gap and a process for the production of same. One embodiment provides a semiconductor device including a body zone, a drain zone and a source zone. A gate extends between the source zone and the drain zone. A reduced band gap region is provided in a region of the body zone, made of at least ternary compound semiconductor material.