Method for producing single side contactable solar cell from semiconductor substrate with n-doping, involves producing n-doped base high doping area at base contacting area in semiconductor substrate

摘要

The method involves producing an n-doped base high doping area (3) at a base contacting area (4) in a semiconductor substrate (1). A p-doped emitter layer (5) is applied on an emitter side (2) of the semiconductor substrate or on multiple emitter side covering intermediate layers, to form a pn-transition with the semiconductor substrate. An independent claim is included for a solar cell, for a single side contacting, which has an n-doped semiconductor substrate.