| 摘要 |
<p>A magnetoresistive storage device includes: a first structure (6), a second structure (9), a temperature increase means (11), and a magnetization direction setting means (12). The first structure (6) is formed by a first magnetic body (1) having a fixed magnetization direction, a first non-magnetic body (2), and a second magnetic body (3) having a magnetization state changed by data which are layered on one another. The second structure (9) is formed by antiferromagnetic material (7) and a third magnetic body (8) which are layered on each other. The temperature increase means (11) increases the temperature of the antiferromagnetic material (7) to a desired temperature. The magnetization direction setting means (12) orients the magnetization direction of the third magnetic body (8) to a desired direction. The antiferromagnetic material (7) is exchange-coupled to the third magnetic body (8). The second magnetic body (3) is magnetically coupled to the third magnetic body (8).</p> |
