| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device preventing Cu wiring having a barrier layer including Mn from becoming high resistance, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor device includes: an insulating layer formed above a semiconductor substrate and including oxygen; first wiring formed in the insulating layer; second wiring formed in the insulating layer, connected to the first wiring and composed of manganese, oxygen and copper; and a projection part formed in the insulating layer, connected to the second wiring, formed separately from the first wiring and embedded with manganese, oxygen and copper. The projection part is formed on the lower side of the second wiring, and the projection part has a via shape and/or a groove shape, and the second wiring is thicker in a wiring width than the projection part. <P>COPYRIGHT: (C)2010,JPO&INPIT |
