| 摘要 |
PROBLEM TO BE SOLVED: To provide an ESD protective element which functions as required without adding any manufacturing process for a semiconductor device which has a high breakdown voltage. SOLUTION: In the ESD protective element that protects the semiconductor device having the high breakdown voltage against a noise and a surge, a diffusion layer 14b formed under a LOCOS oxide film 21b formed at both ends of a gate electrode 33 and not on a drain side is made to be a P type, and then an amount by which a current generated by a surface breakdown of a drain flows below a source-side N type high concentration diffusion layer 15a is limited to raise a hold voltage for a parasitic NPN bipolar operation, thereby setting the ESD protective element using the diffusion layer and an insulating film needed for an internal element without any additional process. Consequently, the ESD protective element functions to be off in a stationary state, but to operate before the internal element breaks down if a surge or noise is applied to the semiconductor device to discharge a large current and then turn off again. COPYRIGHT: (C)2010,JPO&INPIT
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