发明名称 |
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE WITH SELF-ALIGNED STRESSOR AND EXTENSION REGIONS |
摘要 |
Methods are provided for fabricating a MOS transistor having self-aligned stressor and extension regions. A method comprises forming a gate stack overlying a layer of semiconductor material and forming a spacer about sidewalls of the gate stack. The method further comprises forming cavities in the layer of semiconductor material, wherein the cavities are substantially aligned with the spacer. The method further comprises forming a stress-inducing semiconductor material in the cavities, and implanting ions of a conductivity-determining impurity type into the stress-inducing semiconductor material using the gate stack and the spacer as an implantation mask.
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申请公布号 |
US2010047985(A1) |
申请公布日期 |
2010.02.25 |
申请号 |
US20080194246 |
申请日期 |
2008.08.19 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
DAKSHINA MURTHY SRIKANTESWARA;GERHARDT MARTIN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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