发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND LASER IRRADIATION APPARATUS |
摘要 |
It is an object to achieve continuous crystal growth without optical interference using a compact laser irradiation apparatus. A megahertz laser beam is split and combined to crystallize a semiconductor film. At this point of time, an optical path difference is provided between the split beams to reduce optical interference. The optical path difference is set to have a length equivalent to the pulse width of the megahertz laser beam or more and less than a length equivalent to the pulse repetition interval; thus, optical interference can be suppressed with a very short optical path difference. Therefore, laser beams can be applied continuously and efficiently without energy deterioration.
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申请公布号 |
US2010048036(A1) |
申请公布日期 |
2010.02.25 |
申请号 |
US20090611990 |
申请日期 |
2009.11.04 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TANAKA KOICHIRO;OISHI HIROTADA |
分类号 |
H01L21/268 |
主分类号 |
H01L21/268 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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