| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal which improves productivity of a single crystal rod without decreasing a dislocation-free rate in a neck part and an enlarged diameter part when producing the single crystal. Ž<P>SOLUTION: In the method for producing a silicon single crystal by the CZ method comprising dissolving a silicone seed crystal into silicon melt from a tip end to a predetermined position using the seed crystal having a sharp tip end, forming a neck part, and enlarging a diameter to pull a single crystal rod, the temperature of the silicon melt is started to decrease by the time beginning pulling which begins to pull the seed crystal upward by the control of heater power after finishing dissolving the seed crystal, and the pulling rates of from the beginning of the pulling till the beginning of the formation of a cylindrical part are varied at least by two steps wherein the pulling rate is less than 0.3 mm/min when beginning the pulling, and thereafter is increased to not less than 0.3 mm/min and not greater than 0.7 mm/min at a timing of not less than 120% or not less than 50% and less than 75% to a time when the diameter of the neck part becomes minimum. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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