发明名称 SEMICONDUCTOR DEVICE WITH A CHARGE CARRIER COMPENSATION STRUCTURE AND PROCESS
摘要 A semiconductor device with a charge carrier compensation structure. In one embodiment, the semiconductor device has a central cell field with a gate and source structure. At least one bond contact area is electrically coupled to the gate structure or the source structure. A capacitance-increasing field plate is electrically coupled to at least one of the near-surface bond contact areas.
申请公布号 US2010044788(A1) 申请公布日期 2010.02.25
申请号 US20080194384 申请日期 2008.08.19
申请人 INFINEON TECHNOLOGIES AUSTRIA AG 发明人 HIRLER FRANZ;WILLMEROTH ARMIN;MAUDER ANTON;DEBOY GERALD;KAPELS HOLGER;TOLKSDORF CAROLIN;PFIRSCH FRANK
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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