发明名称 |
SEMICONDUCTOR DEVICE WITH A CHARGE CARRIER COMPENSATION STRUCTURE AND PROCESS |
摘要 |
A semiconductor device with a charge carrier compensation structure. In one embodiment, the semiconductor device has a central cell field with a gate and source structure. At least one bond contact area is electrically coupled to the gate structure or the source structure. A capacitance-increasing field plate is electrically coupled to at least one of the near-surface bond contact areas. |
申请公布号 |
US2010044788(A1) |
申请公布日期 |
2010.02.25 |
申请号 |
US20080194384 |
申请日期 |
2008.08.19 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
HIRLER FRANZ;WILLMEROTH ARMIN;MAUDER ANTON;DEBOY GERALD;KAPELS HOLGER;TOLKSDORF CAROLIN;PFIRSCH FRANK |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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