METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent deterioration of mechanical strength of a whole element, and to reduce delay of signals propagating through wirings.

SOLUTION: First and third insulating layers constituting each wiring layer 100 include silicon carbide nitride film, silicon carbide and/or silicon oxide. A second insulating layer of a lower-layer wiring layer includes silicon oxide. A second insulating layer of an upper-layer wiring layer includes fluorine-added silicon oxide and/or carbon added silicon oxide. A relative dielectric constant of the second insulating layer of the lower-layer wiring layer is set smaller than that of the second insulating layer of the upper-layer wiring layer.

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