| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of producing an at least partially semi-insulated or p-doped ZnO substrate from an n-doped ZnO substrate. <P>SOLUTION: In the method of producing the partially or fully semi-insulated or p-doped ZnO substrate from the n-doped ZnO substrate, the n-doped ZnO substrate is brought into contact with an anhydrous molten salt selected from anhydrous molten sodium nitrate, lithium nitrate, potassium nitrate and rubidium nitrate. In the partially or fully semi-insulated or p-doped ZnO substrate, when the substrate is, in particular, in the form of a thin layer or film, or a nanowire and is simultaneously doped with an element selected from Na, Li, K and Rb, together with N and O, ZnO or GaN can epitaxially grow on the substrate. An electronic, optoelectronic or electro-optic device such as a light emitting diode (LED) comprising the substrate, is also provided. <P>COPYRIGHT: (C)2010,JPO&INPIT |
