| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of attaining high density of a memory chip and increasing a density of data. <P>SOLUTION: The semiconductor memory device includes: word lines; first bit lines; second bit lines; plate lines; first ferro-electric capacitors; cell transistors prepared respectively corresponding to the first ferro-electric capacitors for regarding the word lines as the gates; second ferro-electric capacitors; and sense amplifiers for detecting data stored in the first ferro-electric capacitors or data stored in the second ferro-electric capacitors through the first bit lines or the second bit lines, or for writing the data into the first ferro-electric capacitors or the second ferro-electric capacitors. The first ferro-electric capacitors and the cell transistors are connected in series between the first bit lines and the plate lines, and the second ferro-electric capacitors are connected between the second bit lines and the word lines. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
