METHOD FOR PRODUCING AlGaN BULK CRYSTAL AND METHOD FOR PRODUCING AlGaN SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method for producing an AlGaN bulk crystal having a large thickness and high quality and to provide a method for producing a high quality AlGaN substrate. SOLUTION: The method for producing the AlGaN bulk crystal has following steps that at first a base substrate denoted as AlaGa(1-a)N (0<a≤1) is prepared and that a bulk crystal denoted as AlbGa(1-b)N (0<b<1) is grown on the main surface of the base substrate. The compositional ratio (a) of Al in the base substrate is larger than the compositional ratio (b) of Al in the bulk crystal. In the method for producing the AlGaN substrate, one or more sheets of the substrate denoted as AlbGa(1-b)N are cut out from the bulk crystal. COPYRIGHT: (C)2010,JPO&INPIT