发明名称 APPARATUS AND METHODS FOR SEMICONDUCTOR IC FAILURE DETECTION
摘要 PROBLEM TO BE SOLVED: To provide an improved voltage contrast test structure. SOLUTION: The test structure is fabricated in a single photolithography step or with a single reticle or mask and includes substructures 102 and 104a-g having a particular voltage potential pattern during a voltage contrast inspection. When an electron beam is scanned across the test structure, an expected intensity pattern is produced and imaged as a result of the expected voltage potentials of the test structure. However, when there is an unexpected pattern of voltage potentials during the voltage contrast inspection, this indicates that a defect is present within the test structure. To produce different voltage potentials, a first set 102 of the substructures is coupled to a relatively large conductive structure 110, such as a large conductive pad, so that the first set of the substructures charges more slowly than a second set of the substructures that are not coupled to the relatively large conductive structure. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010045379(A) 申请公布日期 2010.02.25
申请号 JP20090219052 申请日期 2009.09.24
申请人 KLA-TENCOR CORP 发明人 WEINER KURT H;VERMA GAURAV
分类号 H01L21/66;G01N23/225 主分类号 H01L21/66
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