发明名称 Through Silicon Via Bonding Structure
摘要 System and method for bonding semiconductor substrates is presented. A preferred embodiment comprises forming a buffer layer over a surface of a semiconductor substrate while retaining TSVs that protrude from the buffer layer in order to prevent potential voids that might form. A protective layer is formed on another semiconductor substrate that will be bonded to the first semiconductor substrate. The two substrates are aligned and bonded together, with the buffer layer preventing any short circuit contacts to the surface of the original semiconductor substrate.
申请公布号 US2010047963(A1) 申请公布日期 2010.02.25
申请号 US20080193950 申请日期 2008.08.19
申请人 发明人 WANG DEAN;CHEN CHEN-SHIEN;CHING KAI-MING;LEE BO-I;LEE CHIEN-HSIUN
分类号 H01L21/50 主分类号 H01L21/50
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