| 摘要 |
A storage device includes a multi-level cell flash memory having a plurality of physical memory cells, a read controller, and a write controller. The physical memory cells form a first page and a second page. The write controller in response to a first request is used for writing first data into the first page, duplicating the first data as a second data and writing the second data into the second page. The read controller is used for adjusting the stored data value complying with a desired storing value. Each physical memory cell comprises four threshold voltage ranges indicative of two-bit logical values. The two-bit data is assigned as a first logical value accordingly in response to a two-bit data corresponding to a first and second threshold voltage ranges in a first physical memory cell. The two-bit data is assigned as a second logical value accordingly in response to a two-bit data corresponding to a third and fourth threshold voltage ranges in a second physical memory cell.
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