| 摘要 |
Provided is a non-volatile semiconductor memory circuit capable of improving data retention characteristics and decreasing an area thereof by connecting a constant current circuit (1) and a non-volatile memory cell (2) in series, and setting a connection point therebetween to be an output, to thereby enable writing, in a reading mode or a retention mode, in the non-volatile memory cell (2) which is in a write state. The non-volatile semiconductor memory circuit includes: a power supply for data reading and retaining and a power supply for data rewriting which are provided independently; and a transistor (3) between the output and the power supply for data rewriting, in which the transistor (3) is brought into conduction state when data is rewritten.
|
