发明名称 |
PHOTODIODE ARRAY, METHOD OF MANUFACTURING THE SAME, AND DETECTING DEVICE |
摘要 |
A photodiode array includes a p-side electrode provided on each p-type region formed by selective diffusion and an n-side electrode connected to a non-growth part of an InP substrate and extends to the top surface side of an epitaxial multilayer. A wall surface of an edge at the non-growth part side of the epitaxial multilayer is a smooth surface. A lattice defect density in a portion of the edge of the epitaxial multilayer is higher than a lattice defect density in the inside of the epitaxial multilayer. Furthermore, the non-growth part of the InP substrate to which the n-side electrode is connected has a flat surface continuous from the inside of the InP substrate.
|
申请公布号 |
US2010044677(A1) |
申请公布日期 |
2010.02.25 |
申请号 |
US20090541380 |
申请日期 |
2009.08.14 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NAGAI YOUICHI |
分类号 |
H01L31/0352;H01L31/18 |
主分类号 |
H01L31/0352 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|