发明名称 |
SEMICONDUCTING DEVICES AND METHODS OF MAKING THE SAME |
摘要 |
A semiconducting device includes a p-type semiconducting layer; a plurality of nanostructures extending from the p-type semiconducting layer; and a n-type semiconducting layer, wherein the n-type semiconducting layer coats the p-type semiconducting layer and the plurality of nanostructures. A photovoltaic cell includes a p-type layer; a plurality of nanowires protruding from the p-type layer; and a n-type layer deposited on the p-type layer and the plurality of nanowires forming a heterojunction.
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申请公布号 |
US2010043873(A1) |
申请公布日期 |
2010.02.25 |
申请号 |
US20080197561 |
申请日期 |
2008.08.25 |
申请人 |
KIM YONG HYUP;IM HYEONG UK |
发明人 |
KIM YONG HYUP;IM HYEONG UK |
分类号 |
H01L31/0336;H01L21/34;H01L29/225;H01L31/18 |
主分类号 |
H01L31/0336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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