发明名称 SEMICONDUCTING DEVICES AND METHODS OF MAKING THE SAME
摘要 A semiconducting device includes a p-type semiconducting layer; a plurality of nanostructures extending from the p-type semiconducting layer; and a n-type semiconducting layer, wherein the n-type semiconducting layer coats the p-type semiconducting layer and the plurality of nanostructures. A photovoltaic cell includes a p-type layer; a plurality of nanowires protruding from the p-type layer; and a n-type layer deposited on the p-type layer and the plurality of nanowires forming a heterojunction.
申请公布号 US2010043873(A1) 申请公布日期 2010.02.25
申请号 US20080197561 申请日期 2008.08.25
申请人 KIM YONG HYUP;IM HYEONG UK 发明人 KIM YONG HYUP;IM HYEONG UK
分类号 H01L31/0336;H01L21/34;H01L29/225;H01L31/18 主分类号 H01L31/0336
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