发明名称 |
Vertical gate device for an image sensor and method of forming the same |
摘要 |
A CMOS pixel cell having a charge transfer transistor adjacent the photo-conversion device. The transistor has a channel region surrounded by a gate and an upper source/drain region over the channel region.
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申请公布号 |
US7667250(B2) |
申请公布日期 |
2010.02.23 |
申请号 |
US20040892368 |
申请日期 |
2004.07.16 |
申请人 |
APTINA IMAGING CORPORATION |
发明人 |
MOULI CHANDRA |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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