发明名称 Vertical gate device for an image sensor and method of forming the same
摘要 A CMOS pixel cell having a charge transfer transistor adjacent the photo-conversion device. The transistor has a channel region surrounded by a gate and an upper source/drain region over the channel region.
申请公布号 US7667250(B2) 申请公布日期 2010.02.23
申请号 US20040892368 申请日期 2004.07.16
申请人 APTINA IMAGING CORPORATION 发明人 MOULI CHANDRA
分类号 H01L27/146 主分类号 H01L27/146
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