发明名称 |
Resist top coat composition and patterning process |
摘要 |
There is disclosed a resist top coat composition, comprising at least a polymer that has an amino group or a sulfonamide group at a polymer end and that is represented by the following general formula (1); and a patterning process comprising: at least, a step of forming a photoresist film on a substrate; a step of forming a resist top coat on the photoresist film by using the resist top coat composition; a step of exposing the substrate; and a step of developing the substrate with a developer. There can be provided a resist top coat composition that makes it possible to provide more certainly rectangular and excellent resist patterns when a top coat is formed on a photoresist film; and a patterning process using such a composition.
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申请公布号 |
US7666572(B2) |
申请公布日期 |
2010.02.23 |
申请号 |
US20070808543 |
申请日期 |
2007.06.11 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
HARADA YUJI;HATAKEYAMA JUN |
分类号 |
G03F7/09;G03C1/76;G03F7/20;G03F7/30 |
主分类号 |
G03F7/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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