发明名称 |
Non-volatile memory device with conductive sidewall spacer and method for fabricating the same |
摘要 |
The present invention relates to a non-volatile memory device having conductive sidewall spacers and a method for fabricating the same. The non-volatile memory device includes: a substrate; a gate insulation layer formed on the substrate; a gate structure formed on the gate insulation layer; a pair of sidewall spacers formed on sidewalls of the gate structure; a pair of conductive sidewall spacers for trapping/detrapping charges formed on the pair of sidewall spacers; a pair of lightly doped drain regions formed in the substrate disposed beneath the sidewalls of the gate structure; and a pair of source/drain regions formed in the substrate disposed beneath edge portions of the pair of conductive sidewall spacers.
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申请公布号 |
US7667253(B2) |
申请公布日期 |
2010.02.23 |
申请号 |
US20070790957 |
申请日期 |
2007.04.30 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
LIM KWAN-YONG;CHO HEUNG-JAE;KIM YONG-SOO;JANG SE-AUG;SOHN HYUN-CHUL |
分类号 |
H01L27/108;H01L29/94 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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