| 摘要 |
An electron emission device includes first and second substrates facing each other, cathode electrodes formed on the first substrate, and electron emission regions formed on the cathode electrodes. An insulating layer is formed on the cathode electrodes with opening portions exposing the electron emission regions. Gate electrodes are formed on the insulating layer with opening portions corresponding to the opening portions of the insulating layer. Phosphor layers are formed on the second substrate. At least one anode electrode is formed on a surface of the phosphor layers. The cathode and the gate electrodes are formed by thin filming, and the insulating layer is formed by thick filming.
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