| 发明名称 |
Method of forming a high capacitance diode and structure therefor |
| 摘要 |
In one embodiment, high doped semiconductor channels are formed in a semiconductor region of an opposite conductivity type to increase the capacitance of the device.
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| 申请公布号 |
US7666751(B2) |
申请公布日期 |
2010.02.23 |
| 申请号 |
US20070859638 |
申请日期 |
2007.09.21 |
| 申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
MARREIRO DAVID D.;SHASTRI SUDHAMA C.;GRIVNA GORDON M.;FUCHS EARL D. |
| 分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
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