发明名称 |
Refresh operation of memory device |
摘要 |
A memory device includes a refresh generator and a refresh command generation circuit. The refresh generator generates a refresh signal for a refresh operation enable. The refresh command generation circuit logically combines the refresh signal and a reset signal to produce a refresh command. The refresh command generation circuit produces the refresh command only when either the refresh signal or the reset signal is enabled.
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申请公布号 |
US7668032(B2) |
申请公布日期 |
2010.02.23 |
申请号 |
US20070819808 |
申请日期 |
2007.06.29 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
KIM KI-HO;YOON SEOK-CHEOL |
分类号 |
G11C7/00;G11C7/10 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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