| 摘要 |
A color solid-state imaging device including: a semiconductor substrate; a photoelectric conversion layer provided over the semiconductor substrate, for absorbing light of a first color among three primary colors so as to generate photocharges; plural charge storage regions arranged in a surface layer of the semiconductor substrate, for storing the photocharges; plural first photodiodes arranged in the surface layer of the substrate, for detecting mixed light of second and third colors among the three primary colors that has passed through the photoelectric conversion layer and for storing generated photocharges; plural second photodiodes arranged in the surface layer of the semiconductor substrate, for detecting light of the second color of the mixed light that has passed through the photoelectric conversion layer and for storing generated photocharges; color filter layers provided over the second photodiodes, for interrupting light of the third color; and signal reading units as defined herein.
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