发明名称 Single mode vertical cavity surface emitting laser using photonic crystals with a central defect
摘要 Vertical cavity surface emitting lasers are disclosed, one example of which includes a substrate upon which a lower mirror layer is formed. An active region and upper mirror layer are disposed, in that order, on the lower mirror layer. In particular, the upper mirror layer includes a plurality of DBR layers formed on the active region. The upper mirror layer additionally includes a photonic crystal formed on the plurality of DBR layers and having a periodic structure that contributes to the definition of a central defect. As a consequence of this structure, the photonic crystal has a reflectivity that is wavelength dependent, and the central defect enables the VCSEL to propagate a single mode.
申请公布号 US7668220(B2) 申请公布日期 2010.02.23
申请号 US20090423791 申请日期 2009.04.14
申请人 FINISAR CORPORATION 发明人 LIPSON JAN;LENOSKY THOMAS;DENG HONGYU
分类号 H01S5/00;H01S5/10;H01S5/183 主分类号 H01S5/00
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