| 摘要 |
<p>PURPOSE: A resistive memory device and a method for manufacturing the same are provided to make a set/rest current uniform while reducing a rest current and a rest time by increasing doping concentration gradually. CONSTITUTION: A resistive memory device comprises a bottom electrode(13), a resistant layer(14), and an upper electrode(15). A bottom electrode is arranged on a substrate(10). A resistant layer is arranged on the bottom electrode. A resistant layer is doped with a metal dopant. The top electrode is arranged on the resistant layer. The doping concentration of a metal dopant is increased gradually from the bottom to a top of the resistant layer. The resistant layer is formed with the material of the duality oxide or a perovskite series.</p> |
