发明名称 BACK METAL PROCESS CHAMBER
摘要 PURPOSE: A back metal process chamber is provided to minimize a particle inside a chamber by depositing a metal layer on the backside of a wafer. CONSTITUTION: A back metal chamber comprises an upper heater assembly(10), a lower heater assembly(20), and a vent(30). The upper heater assembly comprises a plate(11), a motor, upper heating lines(12,13), and a nitrogen spray ball(14). A wafer is settled in the plate. The motor turns the plate 360 up and down. The upper heating line heats the plate. A nitrogen spray ball sprays the nitrogen in order to isolating the wafer. The lower assembly comprises a metal source receiving portion(29), a heating units(21,22,23,24), and a lower part nitrogen spray ball. A vent discharges the residue of a process gas.
申请公布号 KR20100020831(A) 申请公布日期 2010.02.23
申请号 KR20080079607 申请日期 2008.08.13
申请人 DONGBU HITEK CO., LTD. 发明人 LEE, SUNG WON
分类号 H01L21/203 主分类号 H01L21/203
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