发明名称 Nonvolatile semiconductor memory device to realize multi-bit cell and method for manufacturing the same
摘要 A nonvolatile semiconductor memory device that realizes a multi-bit cell and a method for manufacturing the same includes manufacturing the nonvolatile semiconductor memory device to be capable of storing multi-bit data, for example, 4-bit data, in a single memory cell and, as a result, the integration degree of a NOR type nonvolatile semiconductor memory device can be improved.
申请公布号 US7666740(B2) 申请公布日期 2010.02.23
申请号 US20070854676 申请日期 2007.09.13
申请人 DONGBU HITEK CO., LTD. 发明人 KIM DONG-OOG
分类号 H01L21/336 主分类号 H01L21/336
代理机构 代理人
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