发明名称 |
Method of fabricating a metal gate CMOS with at least a single gate metal and dual gate dielectrics |
摘要 |
A method of fabricating a complementary metal oxide semiconductor (CMOS) structure including at least one nFET and at least one pFET located on a surface of a semiconductor substrate is provided. In accordance with the present invention, the nFET and the pFET both include at least a single gate metal and the nFET gate stack is engineered to have a gate dielectric stack having no net negative charge and the pFET gate stack is engineered to have a gate dielectric stack having no net positive charge. In particularly, the present invention provides a method of fabricating a CMOS structure in which the nFET gate stack is engineered to include a band edge workfunction and the pFET gate stack is engineered to have a ¼ gap workfunction.
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申请公布号 |
US7666732(B2) |
申请公布日期 |
2010.02.23 |
申请号 |
US20080210703 |
申请日期 |
2008.09.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DORIS BRUCE B.;KIM YOUNG-HEE;LINDER BARRY P.;NARAYANAN VIJAY;PARUCHURI VAMSI K. |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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