发明名称 |
Semiconductor integrated circuit switch matrix |
摘要 |
There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation.
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申请公布号 |
US7667276(B2) |
申请公布日期 |
2010.02.23 |
申请号 |
US20050182026 |
申请日期 |
2005.07.15 |
申请人 |
ADVANTEST CORPORATION;NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY |
发明人 |
OHMI TADAHIRO;KOTANI KOJI;MARUO KAZUYUKI;YAMAGUCHI TAKAHIRO |
分类号 |
H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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